IR2109STRPBF
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Datenblatt
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Muster
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- Kanäle
- 2
- I(lim,min)/Ch
- 0.25 A
- Befestigung
- SMD
- Diagnostik
- YES
- T(j,max)
- 150 °C
- I(lim,max)/Ch
- 0.35 A
- t(on)
- 0.75 µS
- t(off)
- 0.2 µS
- OL Detection
- NO
- Automotive
- NO
- Gehäuse
- SOIC 8N
- RoHS Status
- RoHS-conform
- Verpackung
- REEL
- Hersteller Artikel
- SP001547168
- ECCN
- EAR99
- Zolltarifnummer
- 85423990000
- Land
- Thailand
- ABC-Schlüssel
- B
- Lieferzeit beim Hersteller
- 22 Wochen
600 V half-bridge gate driver IC with shutdown
600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.
For the new version with our SOI technology we recommend 2ED2109S06F, providing integrated bootstrap diode, better robustness and higher switching frequency
Summary of Features
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout for both channels
- 3.3 V, 5 V, and 15 V logic input compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- High side output in phase with IN input
- Logic and power ground + /- 5 V offset
- Internal 540ns dead-time
- Lower di/dt gate driver for better noise immunity
- Shut down input turns off both channels
Potential Applications
- Home appliances
- Servo motor
- Robotics
- Home and building automation
- Industrial heating and welding
- Power tools
- Power Supplies
- Forklifts
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