IPDQ65R080CFD7XTMA1
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Datenblatt
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Muster
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- Configuration
- N-CH
- V(DS)
- 700 V
- I(D)at Tc=25°C
- 107 A
- RDS(on)at 10V
- 80 mOhm
- Q(g)
- 50 nC
- P(tot)
- 223 W
- R(thJC)
- 0.56 K/W
- Logic level
- No
- Mounting
- SMD
- Automotive
- NO
- Gehäuse
- HDSOP-22
- RoHS Status
- RoHS-conform
- Verpackung
- REEL
- Hersteller Artikel
- SP005537603
- Zolltarifnummer
- 85412900000
- Land
- Malaysia
- Lieferzeit beim Hersteller
- 22 Wochen
Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R080CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.
Summary of Features
- Ultrafast body diode and very low Qrr
- 650 V breakdown voltage
- Significantly reduced switching losses compared to competition
- Lowest RDS(on) dependency over temperature
Benefits
- Excellent hard-commutation ruggedness
- Extra safety margin for designs with increased bus voltage
- Enabling increased power density
- Outstanding light-load efficiency in industrial SMPS applications
- Improved full-load efficiency in industrial SMPS applications
- Price competitiveness compared to alternative offerings in the market
Potential Applications
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