IPB027N10N5ATMA1

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Description: N-CH 100V 120A 2,7mOhm TO263-3 Hersteller: INFINEON Matchcode: IPB027N10N5 Rutronik No.: TMOS2168 VPE: 1000 MOQ: 1000 Package: D2PAK Verpackung: REEL

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Parameter

Configuration: N-CH
V(DS): 100 V
I(D)at Tc=25°C: 120 A
RDS(on)at 10V: 2.7 mOhm
Q(g): 112 nC
P(tot): 250 W
R(thJC): 0.6 K/W
Logic level: NO
Mounting: SMD
Technology: OptiMOS
Fast bodydiode: NO
Automotive: NO
Gehäuse: D2PAK
RoHS Status: RoHS-conform
Verpackung: REEL

Hersteller Artikel: SP001227034
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: Malaysia
ABC-Schlüssel: A
Lieferzeit beim Hersteller: 20 Wochen

Beschreibung

OptiMOS™ 5 100V power MOSFET IPB027N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.