IKW75N60TFKSA1

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Description: IGBT 600V 80A 2.0V TO247-3 Hersteller: INFINEON Matchcode: IKW75N60T Rutronik No.: TMOSP7058 VPE: 30 MOQ: 240 Package: TO247-3 Verpackung: TUBE

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Parameter

V(CE): 600 V
I(C): 80 A
V(CEsat): 2.0 V
Gehäuse: TO247-3
Bodydiode: YES
P(tot): 428 W
Automotive: NO
t(r): 36 nS
td(off): 330 nS
td(on): 33 nS
Befestigung: THT
RoHS Status: RoHS-conform
Technologie: TrenchStop
Verpackung: TUBE

Hersteller Artikel: SP000054889
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: China
ABC-Schlüssel: A
Lieferzeit beim Hersteller: 21 Wochen

Beschreibung

Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Summary of Features

Lowest V CEsat drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in V CEsat
Very soft, fast recovery anti-parallel Emitter Controlled Diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution