BSZ180P03NS3GATMA1

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Description: P-CH 30V 39,6A 13,5mOhm S3O8 Hersteller: INFINEON Matchcode: BSZ180P03NS3 G Rutronik No.: TMOS3535 VPE: 5000 MOQ: 5000 Package: TSDSON-8 Verpackung: REEL

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Parameter

Configuration: P-CH
V(DS): 30 V
I(D)at Tc=25°C: 39.6 A
RDS(on)at 10V: 13.5 mOhm
Q(g): 20 nC
P(tot): 40 W
R(thJC): 3.1 K/W
Logic level: NO
Mounting: SMD
Technology: OptiMOSP3
Fast bodydiode: NO
Automotive: NO
Gehäuse: TSDSON-8
RoHS Status: RoHS-conform
Verpackung: REEL

Hersteller Artikel: SP000709744
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: Malaysia
ABC-Schlüssel: B
Lieferzeit beim Hersteller: 16 Wochen

Beschreibung

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.