BFP740ESDH6327XTSA1

Abbildung kann vom Original abweichen

Description: NPN RF-Trans. 4.2V 45mA SOT343 Hersteller: INFINEON Matchcode: BFP 740ESD H6327 Rutronik No.: THF5334 VPE: 3000 MOQ: 3000 Package: SOT343 Verpackung: REEL

Alternativen finden

Datenblatt Einfügen in Projektliste Muster

Download the free Library Loader to convert this file for your ECAD Tool

Parameter

Polarität: NPN
U(cc) max: 4.2 V
Frequenz f: 5500 MHz
P(out): 0.16 W
Gehäuse: SOT343
Automotive: NO
RoHS Status: RoHS-conform
Verpackung: REEL

Hersteller Artikel: SP000785486
ECCN: EAR99
Zolltarifnummer: 85412100000
Land: China
Lieferzeit beim Hersteller: 10 Wochen

Beschreibung

The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Summary of Features:

Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits
NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3V, 6 mA
High gain Gms = 25.5 dB at 2.4 GHz and Gma = 18.5 dB at 5.5 GHz, 3V, 25 mA
OIP3 = 24 dBm at 5.5 GHz, 3V, 25 mA

Target Applications:

Wireless communications: WLAN, WiMax and UWB
Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
Multimedia applications such as portable TV, CATV, FM Radio
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications