1EDF5673FXUMA1
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- Applikation
- GaN DRV
- Automotive
- NO
- Gehäuse
- DSO-16
- RoHS Status
- RoHS-conform
- Verpackung
- REEL
- Hersteller Artikel
- SP003194020
- ECCN
- EAR99
- Zolltarifnummer
- 85423919000
- Land
- Indonesia
- Lieferzeit beim Hersteller
- 15 Wochen
GaN EiceDRIVER™ 1EDF5673F
Single-channel isolated gate driver IC for high voltage GaN switches
Description:
The new single-channel galvanically isolated gate driver IC component 1EDF5673F is a perfect fit for enhancement mode GaN HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™. It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.
Positive and negative gate drive currents:
Fast turn-on / turn-off GaN switch slew-rates
Firmly holds gate voltage at zero, during off-phase:
Avoids spurious GaN switch turn-on
Up to 50% lower dead-time losses
Configurable and constant GaN switching slew-rates, across wide range of switching frequency and duty-cycle:
Robust and energy efficient SMPS designs
Short time-to-market
Integrated galvanic isolation:
Robust operation in hard-switching applications
Safe isolation where needed
Low ohmic outputs:
Source: 0.85 Ω
Sink: 0.35 Ω
Single-channel galvanic isolation:
Functional: VIO= 1500 VDC
VIOWM = 510 Vrms (16-pin DSO)
VIOWM = 460 Vrms (LGA 5x5)
Reinforced: VIOTM = 8000 Vpk
(VDE 0884-10 pending)
VIOWM = 1420 VDC
CMTI min: 200V/ns
Timing:
Minimum output pulse width: 18 ns
Propagation delay accuracy: 13 ns
- Totem-pole PFCs
- Vienna rectifiers
- Multi-level topologies
- Resonant LLC
- Server power supply
- Datacom
- Telecom DC-DC
- Adapter power supply
- Charger power supply
- Wireless charging
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| Nachfolgeartikel |
VPE
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Bestand | |||
|---|---|---|---|---|---|
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1EDB7275FXUMA11xGATE DRV iso. 3kV 650V DSO-8 Artikel-Nr.: ICGDRV1421 Package: DSO-8 Verpackung: REEL |
Stückpreis
0,8714 $
VPE
2500
|
Bestand
15 Wochen
|
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