SP000861698
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Description:
N-CH 650V 6A 660mOhm TO263-3
Hersteller:
INFINEON
Matchcode:
IPB65R660CFD
Rutronik No.:
TMOSP10470
VPE:
1000
MOQ:
1000
Package:
D2PAK
Verpackung:
REEL
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Datenblatt
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Datenblatt
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- Configuration
- N-CH
- V(DS)
- 650 V
- I(D)at Tc=25°C
- 6 A
- RDS(on)at 10V
- 660 mOhm
- Q(g)
- 22 nC
- P(tot)
- 63 W
- R(thJC)
- 2 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- CoolMOSCFD
- Fast bodydiode
- YES
- Automotive
- NO
- Gehäuse
- D2PAK
- RoHS Status
- RoHS-conform
- Verpackung
- REEL
- ECCN
- EAR99
- Zolltarifnummer
- 85412900000
- Land
- Malaysia
- ABC-Schlüssel
- B
- Lieferzeit beim Hersteller
- 54 Wochen
650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Summary of Features
- 650V technology with integrated fast body diode
- Limited voltage overshoot during hard commutation
- Significant Q g reduction compared to 600V CFD technology
- Tighter R DS(ON) max to R DS(on) typ window
- Easy to design-in
- Lower price compared to 600V CFD technology
Benefits
- Low switching losses due to low Q rr at repetitive commutation on body diode
- Self limiting di/dt and dv/dt
- Low Q oss
- Reduced turn on and turn of delay times
- Outstanding CoolMOS™ quality
Target Applications
- Telecom
- Server
- Solar
- HID lamp ballast
- LED lighting
- eMobility
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