IPD65R1K4CFDBTMA1
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Description:
N-CH 650V 2,8A 1400mOhm TO252-3
Hersteller:
INFINEON
Matchcode:
IPD65R1K4CFD
Rutronik No.:
TMOSP10685
VPE:
2500
MOQ:
2500
Package:
DPAK
Verpackung:
REEL
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- Configuration
- N-CH
- V(DS)
- 650 V
- I(D)at Tc=25°C
- 2.8 A
- RDS(on)at 10V
- 1400 mOhm
- Q(g)
- 10 nC
- P(tot)
- 28.4 W
- R(thJC)
- 4.4 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- CoolMOSCFD
- Fast bodydiode
- YES
- Automotive
- NO
- Gehäuse
- DPAK
- RoHS Status
- RoHS-conform
- Verpackung
- REEL
- Hersteller Artikel
- SP000953126
- ECCN
- EAR99
- Zolltarifnummer
- 85412900000
- Land
- China
- ABC-Schlüssel
- B
- Lieferzeit beim Hersteller
- 20 Wochen
650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Summary of Features
- 650V technology with integrated fast body diode
- Limited voltage overshoot during hard commutation
- Significant Q g reduction compared to 600V CFD technology
- Tighter R DS(ON) max to R DS(on) typ window
- Easy to design in
- Lower price compared to 600V CFD technology
- Low switching losses due to low Q rr at repetitive commutation on body diode
- Self limiting di/dt and dv/dt
- Low Q oss
- Reduced turn on and turn of delay times
- Outstanding CoolMOS™ quality
- Telecom
- Server
- Solar
- HID lamp ballast
- LED lighting
- eMobility
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