IPB65R190CFDAATMA1

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Description: N-CH 650V 18A 190mOhm TO263-3 Hersteller: INFINEON Matchcode: IPB65R190CFDA Rutronik No.: TMOSP10816 VPE: 1000 MOQ: 1000 Package: D2PAK Verpackung: REEL

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Parameter

Configuration: N-CH
V(DS): 650 V
I(D)at Tc=25°C: 17.5 A
RDS(on)at 10V: 190 mOhm
Q(g): 68 nC
P(tot): 151 W
R(thJC): 3.7 K/W
Logic level: NO
Mounting: SMD
Technology: CoolMOSCFD
Fast bodydiode: YES
Automotive: AEC-Q(101)
Gehäuse: D2PAK
RoHS Status: RoHS-conform
Verpackung: REEL

Hersteller Artikel: SP000928264
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: Malaysia
ABC-Schlüssel: A
Lieferzeit beim Hersteller: 19 Wochen

Beschreibung

650V CoolMOS™ CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS™ CFDA series provides now also an integrated fast body diode.

Summary of Features

First 650V automotive qualified technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
Low gate charge value Q g
Low Q rr at repetitive commutation on body diode & lowQ oss
Reduced turn on and turn of delay times
Compliant to AEC Q101 standard