IPB180N04S4H0ATMA1

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Description: MOSFET 40V 1.1mOHM AECQ TO263 Hersteller: INFINEON Matchcode: IPB180N04S4-H0 Rutronik No.: TMOSP10306 VPE: 1000 MOQ: 1000 Package: TO-263-7 Verpackung: REEL

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Parameter

Configuration: N-CH
V(DS): 40 V
I(D)at Tc=25°C: 180 A
RDS(on)at 10V: 1,1 mOhm
Q(g): 225 nC
P(tot): 250 W
R(thJC): 0,5 K/W
Logic level: NO
Mounting: SMD
Technology: OptiMOS
Fast bodydiode: NO
Automotive: AEC-Q(101)
Gehäuse: TO-263-7
RoHS Status: RoHS-conform
Verpackung: REEL

Hersteller Artikel: SP000711248
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: Malaysia
ABC-Schlüssel: B
Lieferzeit beim Hersteller: 11 Wochen

Beschreibung

Summary of Features

N-channel - Enhancement mode AEC qualifie MSL1 up to 260°C peak reflow 175°C operating temperature • Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested

Benefits

world's lowest RDS at 40V (on)
highest current capability
lowest switching and conduction power losses for highest thermal efficiency
robust packages with superior quality and reliability
Optimized total gate charge enables smaller driver output stages

Target Applications

OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.
Thus OptiMOS-T2 40V products based on Infineon’s advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.