IKW75N60H3FKSA1

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Description: IGBT 600V 75A 2.0V TO247-3 Hersteller: INFINEON Matchcode: IKW75N60H3 Rutronik No.: IGBT1236 VPE: 30 MOQ: 30 Package: TO247-3 Verpackung: TUBE

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Parameter

V(CE): 600 V
I(C): 75 A
V(CEsat): 1.85 V
Gehäuse: TO247-3
Bodydiode: Yes
P(tot): 428 W
Automotive: NO
t(r): 60 nS
td(off): 265 nS
td(on): 31 nS
Befestigung: THT
RoHS Status: RoHS-conform
Technologie: TrenchStop
Verpackung: TUBE

Hersteller Artikel: SP000906806
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: China
ABC-Schlüssel: A
Lieferzeit beim Hersteller: 21 Wochen

Beschreibung

High speed 600 V, 75 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Summary of Features:

Low switching losses for high efficiency
Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability 5µs
Offering Tj(max) of 175°C
Packaged with and without freewheeling diode for increased design freedom

Benefits:

Low switching and conduction losses
Very good EMI behavior
Can be used with a small gate resistor for reduced delay time and voltage overshoot
High current density
Best-in-class 600 V IGBT efficiency and EMI behavior

Target Applications