IGZ50N65H5XKSA1
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Description:
IGBT 650V 50A 1,65V TO247-3
Hersteller:
INFINEON
Matchcode:
IGZ50N65H5
Rutronik No.:
IGBT2272
VPE:
240
MOQ:
240
Package:
TO-247
Verpackung:
TUBE
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- V(CE)
- 650 V
- I(C)
- 20 A
- V(CEsat)
- 2 V
- Gehäuse
- TO-247
- Bodydiode
- YES
- P(tot)
- 125 W
- Automotive
- NO
- t(r)
- 8 nS
- td(off)
- 156 nS
- td(on)
- 18 nS
- Befestigung
- THT
- RoHS Status
- RoHS-conform
- Technologie
- Trench
- Verpackung
- TUBE
- Hersteller Artikel
- SP001160052
- ECCN
- EAR99
- Zolltarifnummer
- 85412900000
- Land
- China
- Lieferzeit beim Hersteller
- 21 Wochen
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.
Summary of Features
- Extremely low control inductance loop
- Emitter pin for driver feedback
- Same creepage distance of collector emitter as standard TO-247 package
- 20% reduction in total switching losses compared to TO-247 package using same technology
Benefits
- System efficiency improvement compared to standard TO-247
- Benefit increase at high current conditions
- IGBTs operates under lower junction temperature
- Much less power dissipation under overcurrent conditions
Target Applications
- Uninterruptible power supply
- Datacenters
- Telecom Rectifiers
- Photovoltaic Inverters
- Server
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