IGW50N65H5FKSA1

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Description: IGBT 650V 50A 1.6V TO247-3 Hersteller: INFINEON Matchcode: IGW50N65H5 Rutronik No.: IGBT1986 VPE: 30 MOQ: 240 Package: TO247-3 Verpackung: TUBE

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Parameter

V(CE): 650 V
I(C): 50 A
V(CEsat): 1.6 V
Gehäuse: TO247-3
Bodydiode: NO
P(tot): 305 W
Automotive: NO
t(r): 15 nS
td(off): 180 nS
td(on): 21 nS
Befestigung: THT
RoHS Status: RoHS-conform
Technologie: Tren.Stop5
Verpackung: TUBE

Hersteller Artikel: SP001001744
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: China
ABC-Schlüssel: A
Lieferzeit beim Hersteller: 21 Wochen

Beschreibung

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

Summary of Features

650V breakthrough voltage
Compared to Infineon’s Best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stability of V f

Benefits

Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
50V increase in the bus voltage possible without compromising reliability
Higher power density design