2ED2304S06FXUMA1

EiceDRIVER™ 650 V Infineon SOI half-bridge gate driver IC with integrated Bootstrap Diode for IGBTs and MOSFETs with 0.36 A source and 0.7 A sink currents in DSO-8 package.

Using Infineon thin-film-SOI technology, 2ED2304S06F provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V. The output drivers features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V. Additionally, the offline clamping function provides an inherent protection of the parasitic turn-on by floating gate conditions when IC is not supplied.

• Infineon thin-film-SOI-technology
• Fully operational to +650 V offset voltage
• Integrated ultra-fast, low RDSON bootstrap diode
• Output source/sink current capability +0.36 A/-0.7 A
• Tolerant to negative transient voltage up to -50 V (pulse width is up 500 ns) given by SOI-technology
• Gate drive supply range from 10 to 20 V
• Independent under-voltage lockout for both channels
• Short propagation delay and delay matching (60 ns, Maximum)
• Schmitt trigger inputs with hysteresis and pull down
• 3.3 V, 5 V and 15 V input logic compatible
• DSO-8, RoHS compliant package

• Integrated Bootstrap Diode for reduced BOM cost
• -100 V negative VS increased reliability / robustness
• 50% lower level shift losses leads lower temperature operation and higher reliability
• Latch-up immune increased reliability
• Flexible, small PCB footprint, & easy to use device with footprint compatibility to IRS2304 / IR2304