2ED2184S06FXUMA1

650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode and shutdown in DSO-8 package

650 V half-bridge high current, and high speed gate driver for MOSFETand IGBT, with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version for bigger creepage is also available: 2ED21844S06J.Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

• Operating voltages (VS node) upto + 650 V
• Negative VS transient immunity of 100 V
• Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
• Floating channel designed for bootstrap operation
• Integrated shoot-through protection with built-in dead time (400 ns)
• Maximum supply voltage of 25 V
• Independent under voltage lockout (UVLO) for both channels
• 200 ns propagation delay
• IN, /SD input logic, Shutdown input turns off both channels
• Logic Operational up to –11 V on VS Pin
• Negative Voltage Tolerance On Inputs of –5 V
• The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration

• High current gate driver - suitable for high current power device, and high frequency application
• Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
• 50% lower level-shift losses
• Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin

• Motor control and drives
• Light Electric Vehicles (LEV)
• Multicopters and Drones
• Switched Mode Power Supply (SMPS)
• Uninterruptible Power Supply (UPS)
• Power tools
• Service robots
• Home appliances
• LED lighting
• EV charging
• Battery formation