MB85RQ4MLPF-G-BCE1
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- Artikelart
- SPI FRAM
- Dichte
- 4M bit
- Organisation
- 512Kx8
- Gehäuse
- SOP16
- Schreib/Lesezyklus
- 1B
- Genehmigung T(A) min
- -40 °C
- Genehmigung T(A) max
- 85 °C
- U(cc)min
- 1.7 V
- U(cc)max
- 1.95 V
- Automotive
- NO
- RoHS Status
- RoHS-conform
- Verpackung
- TRAY
- ECCN
- EAR99
- Zolltarifnummer
- 85423290000
- Land
- Japan
- ABC-Schlüssel
- C
- Lieferzeit beim Hersteller
- 34 Wochen
MB85RQ4ML is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the non-volatile memory cells.
MB85RQ4ML adopts the Quad Serial Peripheral Interface (QSPI) which can realize a high bandwidth such as Read and Write at 54 MB/s using four bi-directional pins (Quad I/O).
The MB85RQ4ML is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cell used in the MB85RQ4ML can be used for 10 trillion read/write operations, which is a significant improvement over the number of read and write operations supported by Falsh memory and EEPROM.
MB85RQ4ML is able to write data at a high bandwidth without any waiting time and fits perfectly into Networking, Gaming, Industrial computing, Camera, RAID controllers etc.
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